cystech electronics corp. spec. no. : c316e3 issued date : 2010.01.22 revised date : 2010.09.28 page no. : 1/5 BTC2881E3 cystek product specification silicon npn epitaxial planar transistor BTC2881E3 bv ceo 200v i c 1a r cesat(max) 0.86 description ? high breakdown voltage, bv ceo 200v ? large continuous collector current capability ? low collector saturation voltage ? rohs compliant package symbol outline BTC2881E3 absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 300 v collector-emitter voltage v ceo 200 v emitter-base voltage v ebo 6 v collector current i c 1 a base current i b 0.2 a power dissipation @t a =25 2 w power dissipation @t c =25 p d 20 w operating junction temperature and storag e temperature range tj ; tstg -55~+150 c to-220 b base c collector e emitter b c e
cystech electronics corp. spec. no. : c316e3 issued date : 2010.01.22 revised date : 2010.09.28 page no. : 2/5 BTC2881E3 cystek product specification thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 6.25 c/w thermal resistance, junction-to-ambient, max r th,j-a 62.5 c/w characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 300 - - v i c =10 a bv ceo 200 - - v i c =10ma bv ebo 6 - - v i e =10 a i cbo - - 100 na v cb =300v i ebo - - 100 na v eb =6v *v ce(sat) - 0.2 0.4 v i c =500ma, i b =50ma *v ce(sat) - - 0.6 v i c =700ma, i b =35ma *v be(sat) - - 1 v i c =500ma, i b =50ma *v be(on) - - 1 v v ce =5v, i c =500ma *h fe 1 140 - - - v ce =5v, i c =50ma *h fe 2 160 - 320 - v ce =5v, i c =100ma *h fe 3 30 - - - v ce =5v, i c =700ma f t - 120 - mhz v ce =5v, i c =100ma cob - - 30 pf v cb =10v, i e =0a,f=1mhz *pulse test: pulse width 300s, duty cycle 2% ordering information device package shipping BTC2881E3 to-220 (rohs compliant package) 50 pcs / tube , 40 tubes/box
cystech electronics corp. spec. no. : c316e3 issued date : 2010.01.22 revised date : 2010.09.28 page no. : 3/5 BTC2881E3 cystek product specification typical characteristics current gain vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) current gain---hfe vce=2v vce=5v saturation voltage vs collector current 10 100 1000 10000 1 10 100 1000 collector current---ic(ma) saturation voltage---(v) ic=10ib vcesat ic=20ib saturation voltage vs collector current 100 1000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) vbesat@ic=10ib on voltage vs collector current 100 1000 1 10 100 1000 collector current---ic(ma) on voltage---(mv) vbeon@vce=5v power derating curve 0 0.5 1 1.5 2 2.5 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w) power derating curve 0 5 10 15 20 25 0 50 100 150 200 casetemperature---tc() power dissipation---pd(w)
cystech electronics corp. spec. no. : c316e3 issued date : 2010.01.22 revised date : 2010.09.28 page no. : 4/5 BTC2881E3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c316e3 issued date : 2010.01.22 revised date : 2010.09.28 page no. : 5/5 BTC2881E3 cystek product specification to-220 dimension *: typical inches 3-lead to-220 plastic package cystek package code: e3 style: pin 1.base 2.collector 3.emitter 4.collector a b e g i k m o p 3 2 1 c n h d 4 marking: date code millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.2197 0.2949 5.58 7.49 i - * 0.1508 - * 3.83 b 0.3299 0.3504 8.38 8.90 k 0.0295 0.0374 0.75 0.95 c 0.1732 0.185 4.40 4.70 m 0.0449 0.0551 1.14 1.40 d 0.0453 0.0547 1.15 1.39 n - * 0.1000 - * 2.54 e 0.0138 0.0236 0.35 0.60 o 0.5000 0.5618 12.70 14.27 g 0.3803 0.4047 9.66 10.28 p 0.5701 0.6248 14.48 15.87 h - * 0.6398 - * 16.25 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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